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A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Author

Listed:
  • Qingyi Kong

    (Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China)

  • Mingxing Du

    (Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China)

  • Ziwei Ouyang

    (Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
    Department of Electrical Engineering, Technical University of Denmark, 2800 Kgs Lyngby, Denmark)

  • Kexin Wei

    (Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China)

  • William Gerard Hurley

    (Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
    Department of Electrical Engineering, The National University of Ireland, H91 TK33 Galway, Ireland)

Abstract

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current ( I c ) and junction temperature ( T j ). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

Suggested Citation

  • Qingyi Kong & Mingxing Du & Ziwei Ouyang & Kexin Wei & William Gerard Hurley, 2019. "A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy," Energies, MDPI, vol. 12(9), pages 1-13, May.
  • Handle: RePEc:gam:jeners:v:12:y:2019:i:9:p:1791-:d:230231
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    References listed on IDEAS

    as
    1. Qingyi Kong & Mingxing Du & Ziwei Ouyang & Kexin Wei & William Gerard Hurley, 2019. "A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms," Energies, MDPI, vol. 12(5), pages 1-15, March.
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    Cited by:

    1. Xingliang Liu & Guiyun Tian & Yu Chen & Haoze Luo & Jian Zhang & Wuhua Li, 2020. "Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach," Energies, MDPI, vol. 13(10), pages 1-14, May.
    2. Zilang Hu & Xinglai Ge & Dong Xie & Yichi Zhang & Bo Yao & Jian Dai & Fengbo Yang, 2019. "An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring," Energies, MDPI, vol. 12(20), pages 1-18, October.

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