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A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Author

Listed:
  • Qingyi Kong

    (Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China)

  • Mingxing Du

    (Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China)

  • Ziwei Ouyang

    (Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China)

  • Kexin Wei

    (Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China)

  • William Gerard Hurley

    (Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
    Department of Electrical Engineering, The National University of Ireland, H91 TK33 Galway, Ireland)

Abstract

The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

Suggested Citation

  • Qingyi Kong & Mingxing Du & Ziwei Ouyang & Kexin Wei & William Gerard Hurley, 2019. "A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms," Energies, MDPI, vol. 12(5), pages 1-15, March.
    • Handle: RePEc:gam:jeners:v:12:y:2019:i:5:p:851-:d:210976
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    Cited by:

    1. Qingyi Kong & Mingxing Du & Ziwei Ouyang & Kexin Wei & William Gerard Hurley, 2019. "A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy," Energies, MDPI, vol. 12(9), pages 1-13, May.

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