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Shape optimization for a simulation of a semiconductor problem

Author

Listed:
  • Abouchabaka, J.
  • Aboulaich, R.
  • Guennoun, O.
  • Nachaoui, A.
  • Souissi, A.

Abstract

This work gives a study of the Regier’s model by using the shape optimization techniques. Two formulations of this model are proposed with appropriate boundary conditions of the MESFET transistor. In each formulation the existence of a free boundary, separating the depletion and neutrality of charge regions, is proved with some hypothesis. The shape gradient is calculated for each formulation to approach the solution. To approximate the free boundary, two algorithms are presented. Numerical results obtained by implementing the last algorithm prove that this shape optimization techniques provide a reasonably smooth free boundary.

Suggested Citation

  • Abouchabaka, J. & Aboulaich, R. & Guennoun, O. & Nachaoui, A. & Souissi, A., 2001. "Shape optimization for a simulation of a semiconductor problem," Mathematics and Computers in Simulation (MATCOM), Elsevier, vol. 56(1), pages 1-16.
    • Handle: RePEc:eee:matcom:v:56:y:2001:i:1:p:1-16
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    References listed on IDEAS

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    1. Abouchabaka, J & Aboulaı̈ch, R & Souissi, A, 1998. "Numerical approach of a free boundary in the junction field effect transistor – MESFET," Mathematics and Computers in Simulation (MATCOM), Elsevier, vol. 47(6), pages 531-539.
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    Cited by:

    1. Fahmy, Mohamed Abdelsabour, 2019. "Design optimization for a simulation of rotating anisotropic viscoelastic porous structures using time-domain OQBEM," Mathematics and Computers in Simulation (MATCOM), Elsevier, vol. 166(C), pages 193-205.

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