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Numerical approach of a free boundary in the junction field effect transistor – MESFET

Author

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  • Abouchabaka, J
  • Aboulaı̈ch, R
  • Souissi, A

Abstract

This paper presents the numerical approach of the free boundary by using shape optimization method. The numerical simulation field effect transistor MESFET is possible with the Laplace–Poisson model, which introduces two regions, respectively, known by “charge neutrality region” and “depletion region”, separated by some free boundary.

Suggested Citation

  • Abouchabaka, J & Aboulaı̈ch, R & Souissi, A, 1998. "Numerical approach of a free boundary in the junction field effect transistor – MESFET," Mathematics and Computers in Simulation (MATCOM), Elsevier, vol. 47(6), pages 531-539.
    • Handle: RePEc:eee:matcom:v:47:y:1998:i:6:p:531-539
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    Cited by:

    1. Abouchabaka, J. & Aboulaich, R. & Guennoun, O. & Nachaoui, A. & Souissi, A., 2001. "Shape optimization for a simulation of a semiconductor problem," Mathematics and Computers in Simulation (MATCOM), Elsevier, vol. 56(1), pages 1-16.

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