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Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

In: Solar Cells - New Aspects and Solutions

Author

Listed:
  • Petko Vitanov
  • Malina Milanova

Abstract

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Suggested Citation

  • Petko Vitanov & Malina Milanova, 2011. "Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy," Chapters, in: Leonid A. Kosyachenko (ed.), Solar Cells - New Aspects and Solutions, IntechOpen.
  • Handle: RePEc:ito:pchaps:26649
    DOI: 10.5772/21800
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    More about this item

    JEL classification:

    • Q20 - Agricultural and Natural Resource Economics; Environmental and Ecological Economics - - Renewable Resources and Conservation - - - General
    • Q40 - Agricultural and Natural Resource Economics; Environmental and Ecological Economics - - Energy - - - General

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