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High-Efficiency Front Junction n-Type Crystalline Silicon Solar Cells

In: Nanostructured Solar Cells

Author

Listed:
  • Yuguo Tao
  • Ajeet Rohatgi

Abstract

This chapter aims to provide students/workers in the field of photovoltaics with the valuable information and knowledge needed to understand the physics and operation of high-efficiency front junction n-type crystalline silicon solar cells. The surface recombination and passivation mechanisms, and several promising passivation schemes for front and back cell surfaces, are addressed and reviewed. The advanced cell structures and their fabrication schemes to achieve higher efficiency are described and discussed, including selective emitter on the front and locally doped back surface filed or carrier selective rear contact composed of tunnel oxide and phosphorus-doped polycrystalline silicon thin film. These advanced cell design features have become highly active areas of investigations in the photovoltaic industry for next-generation production cells.

Suggested Citation

  • Yuguo Tao & Ajeet Rohatgi, 2017. "High-Efficiency Front Junction n-Type Crystalline Silicon Solar Cells," Chapters, in: Narottam Das (ed.), Nanostructured Solar Cells, IntechOpen.
    • Handle: RePEc:ito:pchaps:105569
    DOI: 10.5772/65023
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    File URL: https://www.intechopen.com/chapters/52139
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    More about this item

    Keywords

    front junction; recombination; surface passivation; selective emitter; tunnel oxide passivated contact; high efficiency;
    All these keywords.

    JEL classification:

    • Q20 - Agricultural and Natural Resource Economics; Environmental and Ecological Economics - - Renewable Resources and Conservation - - - General
    • Q40 - Agricultural and Natural Resource Economics; Environmental and Ecological Economics - - Energy - - - General

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