IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v27y2020i10ns0218625x19502184.html
   My bibliography  Save this article

Selective Area Deposition For Pattern Generation In Edm Using Masking Technique

Author

Listed:
  • MANESWAR RAHANG

    (Department of Mechanical Engineering, NIT Meghalaya, Shillong-793003, India)

  • PROMOD KUMAR PATOWARI

    (Department of Mechanical Engineering, NIT Silchar, Assam-788010, India)

Abstract

This paper describes about selective deposition of material for pattern generation. The process is carried out using masking technique and by deposition of constituent material of powder metallurgical (P/M) green compact tool at selected area of aluminium work surface in Electro Discharge Machining (EDM) process. The process is carried out to generate line pattern with a hard layer of tungsten and copper at the selected area. Thus, it can improve surface integrity of aluminium substrate while maintaining its overall lightness. P/M tool, positive polarity of tool and hydrocarbon dielectric are used to achieve appreciable amount of material transfer from tool to work surface. The average deviation of material deposition from predefined boundary line is evaluated as edge roughness of the pattern. Taguchi Design of Experiment is used to perform Analysis of Variance (ANOVA) and Overall Evaluation Criteria (OEC) for its parametric study. The surface roughness is obtained in the range of 4.7–10.55μm and edge roughness in the range of 36.49–56.82μm in various working conditions. However, surface roughness of 4.00μm and edge roughness of 21.47μm are achieved at the optimum condition.

Suggested Citation

  • Maneswar Rahang & Promod Kumar Patowari, 2020. "Selective Area Deposition For Pattern Generation In Edm Using Masking Technique," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 27(10), pages 1-16, October.
    • Handle: RePEc:wsi:srlxxx:v:27:y:2020:i:10:n:s0218625x19502184
    DOI: 10.1142/S0218625X19502184
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X19502184
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X19502184?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:27:y:2020:i:10:n:s0218625x19502184. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.