IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v26y2019i06ns0218625x18502050.html
   My bibliography  Save this article

FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS

Author

Listed:
  • A. HOSSEINI

    (Electrical and Computer Engineering Department, University of Alberta, Alberta T6G 1H9, Canada)

  • H. H. GÜLLÜ

    (Electrical and Electronics Engineering Department, Atilim University, Ankara 06830, Turkey)

  • E. COSKUN

    (Physics Department, Canakkale Onsekiz Mart University, Canakkale 17100, Turkey)

  • M. PARLAK

    (Physics Department, Middle East Technical University, Ankara 06800, Turkey5The Center of Solar Energy Research and Applications (GÜNAM), Middle East Technical University, Ankara 06800, Turkey)

  • C. ERCELEBI

    (Physics Department, Middle East Technical University, Ankara 06800, Turkey5The Center of Solar Energy Research and Applications (GÜNAM), Middle East Technical University, Ankara 06800, Turkey)

Abstract

Titanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction devices for the investigation of material and device properties, respectively. The structural, surface morphology, optical and electrical properties of TiO2 film were characterized by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), UV–visual (UV–Vis) spectral and dark current-voltage (I–V) measurement analyses. The deposited film layer was found to be homogeneous structure with crack-free surface. The bandgap value of TiO2 film was determined as 3.6eV and transmission was around 65–85% in the spectral range of 320–1100nm. The conductivity type of the deposited film was determined as n-type by hot probe method. These values make TiO2 film a suitable candidate as the n-type window layer in possible diode applications. TiO2 film was also deposited on p-Si (111) wafer to obtain Al/n-TiO2/p-Si/Al heterojunction device structure. The dark I–V characteristic was studied to determine the possible conduction mechanisms and diode parameters.

Suggested Citation

  • A. Hosseini & H. H. Güllü & E. Coskun & M. Parlak & C. Ercelebi, 2019. "FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 26(06), pages 1-9, July.
    • Handle: RePEc:wsi:srlxxx:v:26:y:2019:i:06:n:s0218625x18502050
    DOI: 10.1142/S0218625X18502050
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X18502050
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X18502050?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:26:y:2019:i:06:n:s0218625x18502050. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.