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COMPARISON OF ELECTRONIC AND OPTICAL PROPERTIES OF GaN MONOLAYER AND BULK STRUCTURE: A FIRST PRINCIPLE STUDY

Author

Listed:
  • MUHAMMAD IMRAN

    (Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan)

  • FAYYAZ HUSSAIN

    (Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan†Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, Pakistan)

  • MUHAMMAD RASHID

    (#x2021;Department of Physics, COMSATS Institute of Information Technology, 44000 Islamabad, Pakistan)

  • HAFEEZ ULLAH

    (#x2020;Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, Pakistan§Laser and Optronics Laboratory, Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan)

  • ATIF SATTAR

    (#xB6;Simulation Laboratory Department of Physics, The Islamia University of Bahawalpur 63100, Pakistan)

  • FAISAL IQBAL

    (#x2020;Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, Pakistan)

  • EJAZ AHMAD

    (#x2225;Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan)

Abstract

The semiconducting two-dimensional (2D) architectures materials have potential applications in electronics and optics. The design and search of new 2D materials have attracted extensive attention recently. In this study, first principle calculation has been done on 2D gallium nitride (GaN) monolayer with respect to its formation and binding energies. The electronic and optical properties are also investigated. It is found that the single isolated GaN sheet is forming mainly ionic GaN bonds despite a slightly weaker GaN interaction as compared with its bulk counterpart. The dielectric constant value of 2D GaN is smaller as compared to 3D GaN due to less effective electronic screening effect in the layer, which is accompanied by lesser optical adsorption range and suggested to be a promising candidate in electronic and optoelectronic devices.

Suggested Citation

  • Muhammad Imran & Fayyaz Hussain & Muhammad Rashid & Hafeez Ullah & Atif Sattar & Faisal Iqbal & Ejaz Ahmad, 2016. "COMPARISON OF ELECTRONIC AND OPTICAL PROPERTIES OF GaN MONOLAYER AND BULK STRUCTURE: A FIRST PRINCIPLE STUDY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 23(04), pages 1-6, August.
    • Handle: RePEc:wsi:srlxxx:v:23:y:2016:i:04:n:s0218625x16500268
    DOI: 10.1142/S0218625X16500268
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