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EFFECTS OFTiOxINTERLAYER ON RESISTANCE SWITCHING OFPt/TiOx/ZnO/n+-SiSTRUCTURES

Author

Listed:
  • HONGXIA LI

    (Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China)

  • XIAOJUN LV

    (Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China)

  • JUNHUA XI

    (Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China;
    State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China)

  • XIN WU

    (School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China)

  • QINAN MAO

    (Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China)

  • QINGMIN LIU

    (School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China)

  • ZHENGUO JI

    (Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China;
    State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China)

Abstract

In this paper, we fabricatedPt/TiOx/ZnO/n+-Sistructures by insertingTiOxinterlayer betweenPttop electrode (TE) andZnOthin film for non-volatile resistive random access memory (ReRAM) applications. Effects ofTiOxinterlayer with different thickness on the resistance switching ofPt/TiOx/ZnO/n+-Sistructures were investigated. Conduction behaviors in high and low resistance state (HRS and LRS) fit well with the trap-controlled space-charge-limited conduction (SCLC) and Ohmic behavior, respectively. Variations of set and reset voltages and HRS and LRS resistances ofPt/TiOx/ZnO/n+-Sistructures were investigated as a function ofTiOxthickness. Switching cycling tests were attempted to evaluate the endurance reliability ofPt/TiOx/ZnO/n+-Sistructures. Additionally, the switching mechanism was analyzed by the filament model.

Suggested Citation

  • Hongxia Li & Xiaojun Lv & Junhua Xi & Xin Wu & Qinan Mao & Qingmin Liu & Zhenguo Ji, 2014. "EFFECTS OFTiOxINTERLAYER ON RESISTANCE SWITCHING OFPt/TiOx/ZnO/n+-SiSTRUCTURES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 21(05), pages 1-6.
    • Handle: RePEc:wsi:srlxxx:v:21:y:2014:i:05:n:s0218625x14500619
    DOI: 10.1142/S0218625X14500619
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