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OBSERVATION OF NANOSPHERICALn-SnO2/p-SiHETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE

Author

Listed:
  • BO HE

    (Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, P. R. China)

  • JING XU

    (Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, P. R. China)

  • HUAIZHONG XING

    (Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, P. R. China)

  • CHUNRUI WANG

    (Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, P. R. China)

  • YING GUO

    (Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, P. R. China)

  • HONGWEI LU

    (Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, P. R. China)

Abstract

Thin film of tin oxide(SnO2)was prepared on p-type polished silicon wafer by ultrasonic spray pyrolysis technique usingSnCl4precursor solution to fabricate nanosphericaln-SnO2/p-Siheterojunction photoelectric device. Deposition of film was achieved at 400°C substrate temperature. The self-made ultrasonic spray pyrolysis system is very cheap and convenient. The microstructural, optical and electrical properties of theSnO2film were characterized by XRD, SEM, XPS, UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. TheSnO2film has the nanospherical particles. The electrical properties of heterojunction were investigated byI–Vmeasurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current density of this diode are 4.27 and 2.52 × 10-6A/cm2, respectively. And the values ofIF/IR(IFandIRstand for forward and reverse current, respectively) at 5 V is found to be as high as 248. TheSnO2/p-Siheterojunction device exhibits obvious photovoltaic effect. Under an AM1.5 illumination condition, the open-circuit voltage(Voc), short-circuit current density(JSC), fill factor (FF) of the device are 150 mV, 3.9 × 10-3mA/cm2and 20.58%, respectively. High photocurrent is obtained under a reverse bias when the crystalline quality ofSnO2film is good enough to transmit the light into p-Si. Under 6.3 mW/cm2illumination, when the reverse bias is -5 V, the photocurrent gain is as high as 86.

Suggested Citation

  • Bo He & Jing Xu & Huaizhong Xing & Chunrui Wang & Ying Guo & Hongwei Lu, 2013. "OBSERVATION OF NANOSPHERICALn-SnO2/p-SiHETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 20(05), pages 1-7.
    • Handle: RePEc:wsi:srlxxx:v:20:y:2013:i:05:n:s0218625x13500522
    DOI: 10.1142/S0218625X13500522
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    References listed on IDEAS

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    1. Leonid Bruc & Alexei Simaschevici & Dormidont Serban, 2011. "Solar Cells on the Base of Semiconductor-Insulator-Semiconductor Structures," Chapters, in: Leonid A. Kosyachenko (ed.), Solar Cells - Silicon Wafer-Based Technologies, IntechOpen.
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