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THE INVESTIGATION OF THE ELECTRON BEHAVIOR OFSnO2BY THE SIMULATION METHODS GGA ANDmBJ ASSOCIATED WITH THE EELS EXPERIMENTAL ANALYSIS TECHNIQUE

Author

Listed:
  • Z. CHELAHI CHIKR

    (Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique (ENP), BP1523 Oran Mnaouar, Oran, Algeria)

  • A. MOKADEM

    (Laboratoire de la Matière Condensée et Développement Durable (LMCDD), Université Djillali Liabès, Sidi Bel-Abbès, Algeria)

  • M. BOUSLAMA

    (Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique (ENP), BP1523 Oran Mnaouar, Oran, Algeria)

  • F. BESAHRAOUI

    (Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique (ENP), BP1523 Oran Mnaouar, Oran, Algeria)

  • M. GHAFFOUR

    (Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique (ENP), BP1523 Oran Mnaouar, Oran, Algeria)

  • A. OUERDANE

    (Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique (ENP), BP1523 Oran Mnaouar, Oran, Algeria)

  • K. BOULENOUAR

    (Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique (ENP), BP1523 Oran Mnaouar, Oran, Algeria)

  • N. CHAUVIN

    (Institut de Nanotechnologie de Lyon INL UMR CNRS, 5270-INSA de Lyon Bât. Blaise Pascal 7, Avenue Jean Capelle 69621, Villeurbanne Cedex, France)

  • B. BENRABAH

    (Laboratoire de Génie Physique, Université Ibn Khaldoun Tiaret, Algeria)

Abstract

The semiconductorSnO2is an important material to be used in different fields as the monitoring of air pollution, toxic gas and other applications as solar cells, optoelectronic devices, etc. The simulation method such as the generalized gradient approximation (GGA) ofSnO2is very interesting in determining its lattice parameters with accuracy in comparison with the experimental data. The GGA simulation method and the one established by Becke and Johnson mBJ are useful for predicting the electronic properties related to the charge distribution ofSnO2compound. The calculated density of states and the charge density are well confirmed owing to the experimental results related to the electron energy loss spectroscopy (EELS) technique, very sensitive to the characterization of materials.

Suggested Citation

  • Z. Chelahi Chikr & A. Mokadem & M. Bouslama & F. Besahraoui & M. Ghaffour & A. Ouerdane & K. Boulenouar & N. Chauvin & B. Benrabah, 2013. "THE INVESTIGATION OF THE ELECTRON BEHAVIOR OFSnO2BY THE SIMULATION METHODS GGA ANDmBJ ASSOCIATED WITH THE EELS EXPERIMENTAL ANALYSIS TECHNIQUE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 20(05), pages 1-8.
    • Handle: RePEc:wsi:srlxxx:v:20:y:2013:i:05:n:s0218625x13500509
    DOI: 10.1142/S0218625X13500509
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