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GROWTH AND STABILITY OF ULTRA-THINPbFILMS ONPb/Si(111)-α-√3 × √3

Author

Listed:
  • WEN-JUAN LI

    (Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, P. R. China)

  • YU-JIE SUN

    (State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China)

  • XIE-GANG ZHU

    (State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China)

  • GUANG WANG

    (State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China)

  • YAN-FENG ZHANG

    (Academy for Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871, P. R. China)

  • JIN-FENG JIA

    (State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China;
    Department of Physics, Shanghai JiaoTong University, Shanghai 200240, P. R. China)

  • XUCUN MA

    (Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, P. R. China)

  • XI CHEN

    (State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China)

  • QI-KUN XUE

    (Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, P. R. China;
    State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China)

Abstract

Ultra-thinPbfilms with magic thicknesses of 2 monolayer (ML), 4 ML and 6 ML were prepared of atomically flat on the substrate ofSi(111)-α-√3 × √3(or SIC phase) at 145 K. Their surface morphologies and stability were studied by low temperature scanning tunneling microscopy and temperature-dependent angle resolved photoemission spectroscopy. We found that the well ordered SIC interface can lower the diffusion barrier and enhance the interface charge transfer, leading to different critical thickness compared toPb/Si(111)-7 × 7grown under same conditions. Enhanced thermal expansion coefficients were also observed in ultra-thinPbfilms at low temperature.

Suggested Citation

  • Wen-Juan Li & Yu-Jie Sun & Xie-Gang Zhu & Guang Wang & Yan-Feng Zhang & Jin-Feng Jia & Xucun Ma & Xi Chen & Qi-Kun Xue, 2011. "GROWTH AND STABILITY OF ULTRA-THINPbFILMS ONPb/Si(111)-α-√3 × √3," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 18(01n02), pages 77-82.
    • Handle: RePEc:wsi:srlxxx:v:18:y:2011:i:01n02:n:s0218625x11014473
    DOI: 10.1142/S0218625X11014473
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    Keywords

    Pbfilms; stability; STM; ARPES;
    All these keywords.

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