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Investigation On Heterostructural Optoelectronic Switches

Author

Listed:
  • DER-FENG GUO

    (Department of Electronic Engineering, Air Force Academy, P. O. Box 14-49 Kangshan, Kaohsiung County 820, Taiwan)

  • JUNG-HUI TSAI

    (Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan)

  • TZU-YEN WENG

    (Department of Physics, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan)

  • CHIH-HUNG YENG

    (Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan)

  • PO-HSIEN LAI

    (Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan)

  • SSU-YI FU

    (Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan)

  • CHING-WEN HUNG

    (Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan)

  • WEN-CHAU LIU

    (Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan)

Abstract

GaAs/InGaPandAlGaAs/GaAs/InAlGaPnpn heterostructural optoelectronic switches (HSOSs) have been fabricated to demonstrate the bulk-barrier and potential-spike height effects on the switching. It is seen that the illumination decreases the switching voltageVSand increases the switching currentISin theGaAs/InGaPHSOS characteristics. But in theAlGaAs/GaAs/InAlGaPHSOS, theVSandISpresent contrary trends. These characteristic variation differences in the two HSOSs are mainly due to the photogenerated carriers that affect the bulk-barrier and potential-spike heights.

Suggested Citation

  • Der-Feng Guo & Jung-Hui Tsai & Tzu-Yen Weng & Chih-Hung Yeng & Po-Hsien Lai & Ssu-Yi Fu & Ching-Wen Hung & Wen-Chau Liu, 2008. "Investigation On Heterostructural Optoelectronic Switches," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(01n02), pages 139-144.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x08011123
    DOI: 10.1142/S0218625X08011123
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