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Enhanced Dielectric Characteristics Of Manganese-Doped Bzt Thin Films

Author

Listed:
  • J. ZHU

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China)

  • W. J. JIE

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China)

  • X. H. WEI

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China)

  • W. F. QIN

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China)

  • Y. ZHANG

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China)

  • Y. R. LI

    (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China)

Abstract

Ba(Zr0.2Ti0.8)O3(BZT) and 2 mol%Mnadditional doped BZT (Mn-BZT) thin films were deposited by pulsed laser deposition technique under the same growth conditions onLaAlO3substrates with the bottom electrodes ofLaNiO3. The microstructure of the films was characterized by X-ray diffraction (XRD) in the mode ofθ–2θscan and Φ-scan. The results indicated that BZT film was (001)-oriented_with an in-plane relationship of BZT[100]//LNO[100]//LAO[100]. TheMn-BZT film exhibited higher dielectric constant of 225 at zero electric field, larger dielectric tunability of 59.4%, and lower dielectric loss of 1.8% under an applied electric field of 720 kV/cm. The figure of merit for BZT thin film increased from 19.8 to 33 byMndoping. The enhanced dielectric behavior byMndoping could be mainly attributed to the decrease of oxygen vacancies and the reorientation of the dipolar defect complex of${\rm Mn}^{\prime\prime}_{\rm Ti} - {\rm V}_{\ddot{\rm O}}$.

Suggested Citation

  • J. Zhu & W. J. Jie & X. H. Wei & W. F. Qin & Y. Zhang & Y. R. Li, 2008. "Enhanced Dielectric Characteristics Of Manganese-Doped Bzt Thin Films," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 15(01n02), pages 29-33.
    • Handle: RePEc:wsi:srlxxx:v:15:y:2008:i:01n02:n:s0218625x08010907
    DOI: 10.1142/S0218625X08010907
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    Keywords

    Mndoping; BZT; PLD; 77.55.+f; 68.55.Ln;
    All these keywords.

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