Author
Listed:
- X. B. XU
(Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China)
- S. M. HUANG
(Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China)
- Y. W. CHEN
(Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China)
- Z. SUN
(Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China)
- S. Y. HUANG
(Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China)
Abstract
Intrinsic zinc oxide (i-ZnO) film was prepared forCuInSe2(CIS) solar cell application [L. Stolt and J. Hedstrom,Appl. Phys. Lett.62(1993) 8; D. Rudmann, Ph.D. Thesis, University of Basel, Basel, (2004)] on glass substrate by inductively coupled plasma (ICP)-assisted DC magnetron sputtering and under a quite low temperature of 50°C. The sputtering was done in anArandO2gas mixture and a ceramicZnOtarget was used. The microstructures of the film were investigated by X-ray diffractometer and scanning electron microscope. It was shown that all of the films had ac-axis preferred orientation perpendicular to the substrate. In our work, film with resistivity of7 × 108Ω·cmand transmittance of about 80% in the visible range was prepared under the conditions of 4 mTorr working pressure and 50°C temperature.
Suggested Citation
X. B. Xu & S. M. Huang & Y. W. Chen & Z. Sun & S. Y. Huang, 2007.
"HIGH-QUALITY INTRINSICZnOFILM FOR THE APPLICATION OF SOLAR CELL GROWN BY ICP-ASSISTED REACTIVE DC MAGNETRON SPUTTERING AT LOW TEMPERATURE,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(06), pages 1083-1087.
Handle:
RePEc:wsi:srlxxx:v:14:y:2007:i:06:n:s0218625x07010664
DOI: 10.1142/S0218625X07010664
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