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TEMPERATURE DEPENDENCE OF RELAXATION INAlGaN/GaNHETEROSTRUCTURES

Author

Listed:
  • Z. S. JIANG

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • W. ZHANG

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • Q. JI

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • J. XU

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • D. J. CHEN

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • B. SHEN

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • X. S. WU

    (Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China)

  • A. M. ZHANG

    (College of Science, Hohai University, Nanjing 210098, China)

  • K. X. ZHANG

    (College of Science, Hohai University, Nanjing 210098, China)

  • S. L. YIN

    (College of Science, Hohai University, Nanjing 210098, China)

Abstract

Effects ofSi3N4passivation layer on the lattice strain ofAl0.22Ga0.78Nlayer with the thickness of 100 nm has been studied byin situX-ray diffraction by the temperature range of 25°C–550°C. Results show that the temperature dependence of the strain relaxations can be separated into three linear regions. After passivation, an additional in-plane tensile strain is observed. The residual tensile strain increases with increasing temperature at low temperature, while at higher temperature the residual tensile strain decreases slightly. There is clear influence when a passive layer is deposited on the surface of the heterostructures. The linear regions in the temperature dependence of strain vary after the passive layer deposited on the heterostructure. These results indicate that the variation of the lattice strain relates to the difference in thermal stability between the epitaxy layer and the substrate.

Suggested Citation

  • Z. S. Jiang & W. Zhang & Q. Ji & J. Xu & D. J. Chen & B. Shen & X. S. Wu & A. M. Zhang & K. X. Zhang & S. L. Yin, 2007. "TEMPERATURE DEPENDENCE OF RELAXATION INAlGaN/GaNHETEROSTRUCTURES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(04), pages 837-840.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07010135
    DOI: 10.1142/S0218625X07010135
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