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PHOTOLUMINESCENCE PROPERTIES OFErDOPED INTOC-RICHSiCNANOPARTICLE FILMS

Author

Listed:
  • SHIYONG HUANG

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China;
    Plasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

  • S. XU

    (Plasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

  • JIDONG LONG

    (Plasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

  • Z. SUN

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

  • X. Z. WANG

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

  • Y. W. CHEN

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

  • T. CHEN

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

  • C. NI

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

  • Z. J. ZHANG

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

  • L. L. WANG

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

  • X. D. LI

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

  • P. S. GUO

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

  • W. X. QUE

    (Nanotech. Center, Physics Department, East China Normal University, Shanghai 200062, P. R. China)

Abstract

Polycrystalline silicon carbide(P-SiC)films containingSiCnanoparticles andErwere prepared by r.f. reactive magnetron co-sputtering technique withSiCandErtargets on low-temperature silicon (111) and silicon dioxide substrates with the mixed gas of pure argon, methane, and hydrogen. Surface morphology and photoluminescence (PL) properties of them were measured by field-emission scanning electron microscope and Raman spectroscopy. The peak position, intensity, and the full width at half maximum (FWHM) of PL spectra were relevant withErdoping levels and deposition conditions.

Suggested Citation

  • Shiyong Huang & S. Xu & Jidong Long & Z. Sun & X. Z. Wang & Y. W. Chen & T. Chen & C. Ni & Z. J. Zhang & L. L. Wang & X. D. Li & P. S. Guo & W. X. Que, 2006. "PHOTOLUMINESCENCE PROPERTIES OFErDOPED INTOC-RICHSiCNANOPARTICLE FILMS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(01), pages 123-126.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:01:n:s0218625x06007834
    DOI: 10.1142/S0218625X06007834
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