Author
Listed:
- M. RUSOP
(Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan)
- T. SOGA
(Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan)
- T. JIMBO
(Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan;
Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Nagoya 466-8555, Japan)
- M. UMENO
(Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan;
Department of Electronic Engineering, Chubu University, Kasugai 487-8501, Japan)
- M. SHARON
(Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan;
Nano Technology Research Laboratory, Birla College, Kalyan (W) 421-304 (M.S.), India)
Abstract
Amorphous carbon nitride(a-CNx)films have been deposited by pulsed laser deposition at 0.8 Torr nitrogen gas ambient with varying substrate temperature from 20 to 500°C. The effects of the substrate temperature and ambient nitrogen gas pressure on the surface morphology, composition, nitrogen content, structure, and electrical properties of thea-CNxthin films have been investigated. The depositeda-CNxfilms were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Fourier transform infrared (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-Visible transmittance, and four-probe resistance measurement. It is found that the amorphous structure ofa-CNxfilms can be changed by the substrate temperature (ST) and thea-CNxfilms with high nitrogen content have relatively high electrical resistivity. Also, graphitization is found to cause the reduction of nitrogen content and changes in the bonding structure of nitrogen atoms in the films.
Suggested Citation
M. Rusop & T. Soga & T. Jimbo & M. Umeno & M. Sharon, 2005.
"Semiconducting Amorphous Camphoric Carbon Nitride Thin Films,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 12(04), pages 587-595.
Handle:
RePEc:wsi:srlxxx:v:12:y:2005:i:04:n:s0218625x05007475
DOI: 10.1142/S0218625X05007475
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