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An STM Observation of the Initial Process of Graphitization at the${\rm 6H \mbox-SiC}(000{\bar 1})$Surface

Author

Listed:
  • M. Naitoh

    (Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • M. Kitada

    (Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • S. Nishigaki

    (Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • N. Toyama

    (Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu 804-8550, Japan)

  • F. Shoji

    (Faculty of Engineering, Kyushu Kyoritsu University, Jiyugaoka, Yahatanishi, Kitakyushu 807-8585, Japan)

Abstract

We applied scanning tunneling microscopy (STM) as well as low-energy electron diffraction (LEED) to analyze the initial process of graphitization at${\rm 6H \mbox-SiC}(000{\bar 1})$surfaces. After annealing a${\rm 6H \mbox-SiC}(000{\bar 1})$surface at 1200°C, there appeared many domains with a single graphite layer in the STM image. Each graphite domain was azimuthally disordered to each other. Many large and small domains with various periodicities were observed in the STM image taken after annealing the surface at temperatures higher than 1300°C. These STM images can be explained as Moiré patterns due to different combinations of two graphite layers. In a LEED pattern azimuthally rotated graphite 1 × 1 spots are observed together with the fundamental 6H-SiC(0001)(1 × 1) spots, in consistent with the STM result.

Suggested Citation

  • M. Naitoh & M. Kitada & S. Nishigaki & N. Toyama & F. Shoji, 2003. "An STM Observation of the Initial Process of Graphitization at the${\rm 6H \mbox-SiC}(000{\bar 1})$Surface," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(02n03), pages 473-477.
    • Handle: RePEc:wsi:srlxxx:v:10:y:2003:i:02n03:n:s0218625x03005165
    DOI: 10.1142/S0218625X03005165
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