Author
Listed:
- M. Shimomura
(Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan)
- M. Munakata
(Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan)
- K. Honma
(Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan)
- S. M. Widstrand
(Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;
Department of Physics, Karlstad University, S-65188 Karlstad, Sweden)
- L. Johansson
(Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;
Department of Physics, Karlstad University, S-65188 Karlstad, Sweden)
- T. Abukawa
(Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan)
- S. Kono
(Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan)
Abstract
The structure of benzene adsorbed on a Si(001)(2 × 1) surface up to saturation at room temperature (RT) has been studied by C 1s photoelectron diffraction (PED). Experimental C 1s PED patterns were measured for two regimes of photoelectron kinetic energies at ~ 100 eV and ~ 1000 eV. Simulation of PED patterns was made for three possible structural models predicted so far. Comparison of actual PED patterns and R-factor analysis leads to the conclusion that the so-called standard butterfly (SB) configuration of benzene is present and stable at the saturation coverage at RT. The present PED patterns were not very sensitive to geometrical parameters of absorbed benzene except for the bond length between the topmost carbons in the SB configuration.
Suggested Citation
M. Shimomura & M. Munakata & K. Honma & S. M. Widstrand & L. Johansson & T. Abukawa & S. Kono, 2003.
"Structural Study of Benzene Adsorbed on Si(001) Surface by Photoelectron Diffraction,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(02n03), pages 499-503.
Handle:
RePEc:wsi:srlxxx:v:10:y:2003:i:02n03:n:s0218625x03005013
DOI: 10.1142/S0218625X03005013
Download full text from publisher
As the access to this document is restricted, you may want to search for a different version of it.
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:10:y:2003:i:02n03:n:s0218625x03005013. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.