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INTERACTION BETWEEN ZnAND CdATOMS DURING THE ATOMIC LAYER EPITAXY GROWTH OF CdZnTe/ZnTeQUANTUM WELLS

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  • ERICK M. LARRAMENDI

    (Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN, Apdo. Postal 14-740, 07000 México, DF, Mexico)

  • EDGAR LÓPEZ-LUNA

    (Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN, Apdo. Postal 14-740, 07000 México, DF, Mexico)

  • OSVALDO DE MELO

    (Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN, Apdo. Postal 14-740, 07000 México, DF, Mexico)

  • ISAAC HERNÁNDEZ-CALDERÓN

    (Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN, Apdo. Postal 14-740, 07000 México, DF, Mexico)

Abstract

Layers of 6 and 16 Cd–Te–Zn–Te periods were grown by atomic layer epitaxy (ALE) within ZnTe thin films. Different samples were grown at substrate temperatures of 260 and 290°C. Information about the kinetics of growth and surface reconstruction during the ALE growth of CdTe and ZnTe films, and Cd–Te–Zn–Te periods was obtained by means of reflection high-energy electron diffraction (RHEED) experiments and through the analysis of the temporal behavior of the intensities of several features of the RHEED patterns. The photoluminescence of the sample grown at 260°C presents two narrow and intense peaks corresponding to emission from quantum wells (QWs). However, the spectrum of the samples grown at 290°C does not show any feature associated with QWs, the spectrum resembling that of a ZnTe film. Cd replacement by Zn atoms explains the absence of the CdZnTe QWs at 290°C and a lower Cd content than expected at 260°C. The replacement of Cd atoms by Zn atoms in the CdTe surface was clearly demonstrated by Auger experiments.

Suggested Citation

  • Erick M. Larramendi & Edgar López-Luna & Osvaldo De Melo & Isaac Hernández-Calderón, 2002. "INTERACTION BETWEEN ZnAND CdATOMS DURING THE ATOMIC LAYER EPITAXY GROWTH OF CdZnTe/ZnTeQUANTUM WELLS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(05n06), pages 1725-1728.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:05n06:n:s0218625x02004293
    DOI: 10.1142/S0218625X02004293
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