Author
Listed:
- M. WATANABE
(RIKEN/SPring-8, Kouto 1-1-1, Mikazuki, Sayo, Hyogo 679-5148, Japan)
- Y. HARADA
(RIKEN/SPring-8, Kouto 1-1-1, Mikazuki, Sayo, Hyogo 679-5148, Japan)
- M. NAKAZAWA
(JASRI/SPring-8, Kouto 1-1-1, Mikazuki, Sayo, Hyogo 679-5198, Japan)
- Y. ISHIWATA
(The Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan)
- R. EGUCHI
(The Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan)
- T. TAKEUCHI
(Faculty of Science, Science University of Tokyo, Kagurazaka, Shinjuku, Tokyo 162-8601, Japan)
- A. KOTANI
(The Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan)
- S. SHIN
(The Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;
RIKEN/SPring-8, Kouto 1-1-1, Mikazuki, Sayo, Hyogo 679-5148, Japan)
Abstract
The electronic structures of Ce compounds have been investigated by means of resonant soft X-ray emission spectroscopy (RXES) excited at resonant energy range of Ce3d → 4fabsorption. Polarization dependence of the RXES shows information on concerning electronic states. InCeO2, the Ce4f → 3dRXES spectra are interpreted as electronic structures hybridized between4f0and$4f^1 \underline{v}$states. Peaks appearing in the spectra are attributed to bonding, nonbonding, and antibonding states between those states, while the spectra ofCeRh3cannot be explained by only using the hybridization between4f0and$4f^1 \underline{v}$states. The spectra have large broad Raman peak, especially when the excitation photon energy is set at satellite of Ce3d → 4fabsorption. We attribute the origin of the broad Raman peak to hybridization states involving electron–hole pairs.
Suggested Citation
M. Watanabe & Y. Harada & M. Nakazawa & Y. Ishiwata & R. Eguchi & T. Takeuchi & A. Kotani & S. Shin, 2002.
"POLARIZATION DEPENDENCE OF RESONANT SOFT X-RAY EMISSION SPECTRA IN CeCOMPOUNDS,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(02), pages 983-987.
Handle:
RePEc:wsi:srlxxx:v:09:y:2002:i:02:n:s0218625x02003184
DOI: 10.1142/S0218625X02003184
Download full text from publisher
As the access to this document is restricted, you may want to search for a different version of it.
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:09:y:2002:i:02:n:s0218625x02003184. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.