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Burst Reaction Of Thin Films Excited By High-Flux Soft X-Rays

Author

Listed:
  • TAKESHI KANASHIMA

    (Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan)

  • MASANORI OKUYAMA

    (Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan)

  • HIROAKI OKAMOTO

    (Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan)

  • KIMINORI HATTORI

    (Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan)

  • HARUHIKO OHASHI

    (Experimental Facilities Division, JASRI/SPring-8, Sayo, Hyogo 679-5198, Japan)

  • EIJI ISHIGURO

    (College of Education, University of the Ryukyus, 1 Senbaru, Nishihara-cho, Okinawa 903-0213, Japan)

Abstract

High-flux soft-X-ray irradiation effects were investigated for the thicka-Si:H andμc-Si:H films, glass,MgF2andCaF2plates. Thea-Si:H film of 7500 nm thickness has been burst, and its broken fragments flew off within several seconds. From the changes of Raman spectra before and after the irradiation and the film thickness dependence, it is thought that this is caused by rapid crystallization. SR-induced etching of glass,MgF2andCaF2plates has been observed. Photon energy dependence of the etching depth has been found. Exciting the SiK-shell is effective for etching the glass substrate. On the other hand, photon flux is important in the case of fluoride, and the maximum etching rate ofCaF2is more than 1 μm/min.

Suggested Citation

  • Takeshi Kanashima & Masanori Okuyama & Hiroaki Okamoto & Kiminori Hattori & Haruhiko Ohashi & Eiji Ishiguro, 2002. "Burst Reaction Of Thin Films Excited By High-Flux Soft X-Rays," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(01), pages 401-405.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:01:n:s0218625x02002385
    DOI: 10.1142/S0218625X02002385
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