Author
Listed:
- SANGWOON MOON
(Department of Physics, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, South Korea)
- BOKLAE CHO
(Department of Physics, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, South Korea)
- SUKMIN CHUNG
(Department of Physics, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, South Korea)
- CHONGDO PARK
(PLS, Pohang Acceleration Laboratory, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, South Korea)
- KIJEONG KIM
(PLS, Pohang Acceleration Laboratory, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, South Korea)
- TAIHEE KANG
(PLS, Pohang Acceleration Laboratory, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, South Korea)
- BONGSOO KIM
(PLS, Pohang Acceleration Laboratory, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, South Korea)
Abstract
We investigated the various oxidation conditions of stainless-steel surface using synchrotron radiation photoemission spectroscopy. Stainless-steel samples are oxidized at 450–550°C in various oxygen partial pressures. Increasing the annealing temperature from 450°C to 550°C, the trivalent chromium concentration in the surface increased and iron oxides decreased. The PES spectra from stainless steels oxidized at 550°C show that there exists the critical oxygen partial pressure,$p^\prime_c \sim 5 \times 10^{-7}$Torr. Below this critical pressure, the oxide formed mainly consists of chromium oxide, while the oxide formed mainly consists of iron oxide above the critical pressure. The oxidation behavior is in good agreement with the Ellingham diagram (a free-energy/temperature diagram).
Suggested Citation
Sangwoon Moon & Boklae Cho & Sukmin Chung & Chongdo Park & Kijeong Kim & Taihee Kang & Bongsoo Kim, 2002.
"The Optimal Formation Condition Of Chromium Oxide Thin Film On Stainless-Steel Surface,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(01), pages 285-291.
Handle:
RePEc:wsi:srlxxx:v:09:y:2002:i:01:n:s0218625x02002208
DOI: 10.1142/S0218625X02002208
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