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THE EFFECTS OF ANNEALING OF Ap-TYPE PHOTOLUMINESCENT POROUS SILICON IN VACUUM

Author

Listed:
  • H. J. SHIN

    (Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea;
    Physics Department, POSTECH, Pohang, 790-784, Korea)

  • M. K LEE

    (Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea)

  • C. C. HWANG

    (Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea)

  • K. J. KIM

    (Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea)

  • T.-H. KANG

    (Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea)

  • B. KIM

    (Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea;
    Physics Department, POSTECH, Pohang, 790-784, Korea)

  • G. B. KIM

    (Physics Department, POSTECH, Pohang, 790-784, Korea)

  • C. K. HONG

    (Physics Department, POSTECH, Pohang, 790-784, Korea)

  • K. W. LEE

    (Physics Department, Kongju National University, Kongju, Chungnam, 314-701, Korea)

  • Y. Y. KIM

    (Physics Department, Kongju National University, Kongju, Chungnam, 314-701, Korea)

Abstract

The changes of the structure and chemical states of photoluminescent p-type porous silicon (PS) caused by annealing in vacuum were investigated with atomic force microscopy and X-ray photoemission spectroscopy. The relative intensities of the silicon dioxide and suboxide peaks increased with the annealing temperature. The average size of the fine crystallites of the as-prepared samples was 5–10 nm and became 50–100 nm after being annealed at 550°C. The cause of photoluminescence quenching upon annealing is discussed.

Suggested Citation

  • H. J. Shin & M. K Lee & C. C. Hwang & K. J. Kim & T.-H. Kang & B. Kim & G. B. Kim & C. K. Hong & K. W. Lee & Y. Y. Kim, 2002. "THE EFFECTS OF ANNEALING OF Ap-TYPE PHOTOLUMINESCENT POROUS SILICON IN VACUUM," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(01), pages 261-265.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:01:n:s0218625x02002166
    DOI: 10.1142/S0218625X02002166
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