Author
Listed:
- M. MIZUGUCHI
(Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan)
- K. ONO
(Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan)
- M. OSHIMA
(Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan)
- J. OKABAYASHI
(Graduate School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan)
- H. AKINAGA
(Joint Research Center for Atom Technology (JRCAT)/ National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan)
- T. MANAGO
(Joint Research Center for Atom Technology (JRCAT)/ Angstrom Technology Partnership (ATP), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-0046, Japan)
- M. SHIRAI
(Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan)
Abstract
The electronic structure of CrAs thin films with nominal thicknesses of 2 nm and 30 nm were studied by angle-resolved photoemission spectroscopy using synchrotron radiation. The CrAs film of 2 nm is expected to form a zinc-blende phase which is predicted to have a half-metallic band structure by theoretical calculation. On the other hand, it is considered that the CrAs film of 30 nm is a polycrystalline compound judging from reflection high-energy electron diffraction patterns. Different valence-band photoemission spectra were obtained for the two films. The photoemission spectra of the CrAs film of 30 nm showed no band dispersion, whereas a band dispersion was observed in that of the CrAs film with the nominal thickness of 2 nm.
Suggested Citation
M. Mizuguchi & K. Ono & M. Oshima & J. Okabayashi & H. Akinaga & T. Manago & M. Shirai, 2002.
"THICKNESS DEPENDENCE OF PHOTOEMISSION SPECTRA IN ZINC-BLENDE CrAs,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(01), pages 331-334.
Handle:
RePEc:wsi:srlxxx:v:09:y:2002:i:01:n:s0218625x02002142
DOI: 10.1142/S0218625X02002142
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