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STUDY OFCuDIFFUSION INCu/TaN/SiO2/SiMULTILAYER STRUCTURES

Author

Listed:
  • D. H. ZHANG

    (School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore)

  • S. W. LOH

    (School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore)

  • C. Y. LI

    (Institute of Microelectronics, Science Park II, Singapore 117685, Singapore)

  • P. D. FOO

    (Institute of Microelectronics, Science Park II, Singapore 117685, Singapore)

  • JOSEPH XIE

    (Institute of Microelectronics, Science Park II, Singapore 117685, Singapore)

  • R. LIU

    (Department of Physics, Lower Kent Ridge Road, Singapore 119260, Singapore)

  • A. T. S. WEE

    (Department of Physics, Lower Kent Ridge Road, Singapore 119260, Singapore)

  • L. ZHANG

    (School of Applied Sciences, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore)

  • Y. K. LEE

    (School of Applied Sciences, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore)

Abstract

This paper reports the effect of a flash copper layer, sandwiched between a copper film deposited by metal-organic chemical vapor deposition (MOCVD) and aTaNbarrier metal, on copper diffusion throughTaNbarrier to Si substrate after rapid thermal annealing at different temperatures. It is found that for the structure of CVDCu/TaN/SiO2/Si, which has no flashCulayer,Cucould diffuse through the 25-nm-thickTaNbarrier layer at an annealing temperature of 600°Cfor 180 s. However, by incorporating a flashCulayer between the CVDCufilm and theTaNbarrier,Cudiffusion can be significantly reduced. In addition toCu, the out-diffusion of Si and oxygen, and the interaction between them can also be reduced by the incorporated flashCulayer, due likely to the change of the crystallographic orientation of the CVDCufilms.

Suggested Citation

  • D. H. Zhang & S. W. Loh & C. Y. Li & P. D. Foo & Joseph Xie & R. Liu & A. T. S. Wee & L. Zhang & Y. K. Lee, 2001. "STUDY OFCuDIFFUSION INCu/TaN/SiO2/SiMULTILAYER STRUCTURES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(05), pages 527-532.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:05:n:s0218625x01001270
    DOI: 10.1142/S0218625X01001270
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