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THE INVESTIGATION OF SURFACE TOPOGRAPHY DEVELOPMENT INSi(001)ANDSi(111)DURING SIMS DEPTH PROFILING

Author

Listed:
  • G. S. LAU

    (Department of Materials Science, National University of Singapore, Singapore 119260, Singapore)

  • E. S. TOK

    (Department of Materials Science, National University of Singapore, Singapore 119260, Singapore)

  • A. T. S. WEE

    (Department of Physics, National University of Singapore, Singapore 119260, Singapore)

  • R. LIU

    (Department of Physics, National University of Singapore, Singapore 119260, Singapore)

  • S. L. LIM

    (Department of Physics, National University of Singapore, Singapore 119260, Singapore)

Abstract

The oxygen ion-beam induced surface roughening observed during SIMS (secondary ion mass spectrometry) depth profiling of both theSi(001)andSi(111)surfaces has been studied by atomic force microscopy (AFM) as a function of both sputtered-depth and by varying the incident angles of the primary${\rm O}_2^+$ion beam in the range of 44°–56°. Our result shows a surface orientation dependence of surface roughening whereby the transition roughening depth as well as the sputtering rate were observed to be greater inSi(111)than inSi(001). The orientation dependence was particularly obvious when increasing the incident angle of the${\rm O}_2^+$ion beam from 44° to 56°. In addition, prominent elongated triangular and rectangular features are observed from sputteredSi(001)andSi(111)surfaces respectively at 56° incidence. These features may be associated with the formation of {111} and {001} facets on the sputteredSi(001)andSi(111)surfaces respectively.

Suggested Citation

  • G. S. Lau & E. S. Tok & A. T. S. Wee & R. Liu & S. L. Lim, 2001. "THE INVESTIGATION OF SURFACE TOPOGRAPHY DEVELOPMENT INSi(001)ANDSi(111)DURING SIMS DEPTH PROFILING," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(05), pages 453-457.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:05:n:s0218625x01001233
    DOI: 10.1142/S0218625X01001233
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