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IN-SITUHIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDIES OF TWO-DIMENSIONAL ISLAND-DECAY KINETICS ON ATOMICALLY SMOOTHTiN(001)

Author

Listed:
  • S. KODAMBAKA

    (Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA)

  • V. PETROVA

    (Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA)

  • A. VAILIONIS

    (Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA)

  • P. DESJARDINS

    (Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA)

  • D. G. CAHILL

    (Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA)

  • I. PETROV

    (Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA)

  • J. E. GREENE

    (Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA)

Abstract

In-situhigh-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flatTiN(001)terraces and in single-atom deep vacancy pits at temperatures of 750–950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs–Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23±0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4±0.3 eV.

Suggested Citation

  • S. Kodambaka & V. Petrova & A. Vailionis & P. Desjardins & D. G. Cahill & I. Petrov & J. E. Greene, 2000. "IN-SITUHIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDIES OF TWO-DIMENSIONAL ISLAND-DECAY KINETICS ON ATOMICALLY SMOOTHTiN(001)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(05n06), pages 589-593.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:05n06:n:s0218625x00000816
    DOI: 10.1142/S0218625X00000816
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