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STRUCTURAL DETERMINATION OF THESi/Cu(110)INTERFACE BY PHOTOELECTRON DIFFRACTION

Author

Listed:
  • C. ROJAS

    (Instituto Ciencia de Materiales de Madrid, Campus de Cantoblanco, 28049-Madrid, Spain)

  • J. A. MARTÍn-GAGO

    (Instituto Ciencia de Materiales de Madrid, Campus de Cantoblanco, 28049-Madrid, Spain)

  • E. ROMÁN

    (Instituto Ciencia de Materiales de Madrid, Campus de Cantoblanco, 28049-Madrid, Spain)

  • G. PAOLUCCI

    (Instituto Ciencia de Materiales de Madrid, Campus de Cantoblanco, 28049-Madrid, Spain;
    Sincrotrone Trieste, Padriciano 99, 34012 Trieste, Italy)

  • B. BRENA

    (Instituto Ciencia de Materiales de Madrid, Campus de Cantoblanco, 28049-Madrid, Spain;
    Sincrotrone Trieste, Padriciano 99, 34012 Trieste, Italy)

  • D. COCCO

    (Instituto Ciencia de Materiales de Madrid, Campus de Cantoblanco, 28049-Madrid, Spain;
    Sincrotrone Trieste, Padriciano 99, 34012 Trieste, Italy)

Abstract

Deposition of 0.5Simonolayer (ML) on aCu(110)surface at room temperature (RT) leads to the formation of ac(2×2)LEED pattern. In order to find out the surface atomic structure of this ordered phase, X-ray photoelectron diffraction (XPD) azimuthal scans at different photon energies and full hemispherical XPD patterns of theSi2pcore level have been measured using both synchrotron radiation and a laboratory source. We present an atomic model for the surface structure based on the examination of forward scattering and first order interference XPD features. Refinement of the structural parameters was achieved by performing single scattering cluster (SSC) calculations. In the proposed model Si atoms replace Cu atoms at the surface along the$[1{\underline 1}0]$atomic rows.

Suggested Citation

  • C. ROJAS & J. A. MARTÍn-GAGO & E. ROMÁN & G. PAOLUCCI & B. BRENA & D. COCCO, 1997. "STRUCTURAL DETERMINATION OF THESi/Cu(110)INTERFACE BY PHOTOELECTRON DIFFRACTION," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 4(06), pages 1331-1335.
    • Handle: RePEc:wsi:srlxxx:v:04:y:1997:i:06:n:s0218625x97001760
    DOI: 10.1142/S0218625X97001760
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