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Formation And Modification Of Mesoscopic Structures On Graphite (Hopg) And Silicon Surfaces By Means Of Scanning Tunneling Microscopy

Author

Listed:
  • R. CZAJKA

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan;
    Institute of Physics, Poznan Technical University, ul. Piotrowo 3, 60–965 Poznan, Poland)

  • A. KASUYA

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan)

  • A. WAWRO

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan)

  • N. HORIGUCHI

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan)

  • Y. NISHINA

    (Institute for Materials Research, Tohoku University, Sendai 980, Japan)

Abstract

This paper presents results of our experimental investigations of the adsorption and interaction of microclusters on some crystalline surfaces to form regular arrangements. Microclusters were produced and deposited up to a monolayer coverage on the c-plane of graphite (HOPG) or Si(111) substrates by thermal evaporation, laser ablation, or deposition from STM tip. A rectangular lattice arrangement ofSen(n=5–8)ring cluster has been fabricated for the first time on the HOPG. Also, arrays of Au clusters with a well-controlled diameter, desired periodicity, and size have been obtained by applying a sequence of voltage pulses between the STM tip and the substrate. A variety of carbon clusters have been produced by laser modification ofC60fullerenes, and observed by means of scanning tunneling microscope (STM). Finally, various nanometer-scale structures have been modified by applying different bias voltages (between tip probe and sample) or induced by thermal treatment.

Suggested Citation

  • R. Czajka & A. Kasuya & A. Wawro & N. Horiguchi & Y. Nishina, 1996. "Formation And Modification Of Mesoscopic Structures On Graphite (Hopg) And Silicon Surfaces By Means Of Scanning Tunneling Microscopy," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(01), pages 961-967.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:01:n:s0218625x96001728
    DOI: 10.1142/S0218625X96001728
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