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SOLVATION EFFECTS ON COLLISIONAL PROCESSES OF SIZE-SELECTED${\rm{I}}_2^- ({\rm{CO}}_2)_n$CLUSTER IONS WITH SILICON SURFACE

Author

Listed:
  • HISATO YASUMATSU

    (Department of Chemistry, School of Science, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan;
    Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, Saitama 351–01, Japan)

  • TATSUYA TSUKUDA

    (Department of Chemistry, School of Science, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan;
    Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, Saitama 351–01, Japan)

  • TOSHIKI SUGAI

    (Department of Chemistry, School of Science, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan;
    Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, Saitama 351–01, Japan)

  • AKIRA TERASAKI

    (Department of Chemistry, School of Science, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan;
    Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, Saitama 351–01, Japan)

  • TAKASHI NAGATA

    (Department of Chemistry, School of Science, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan;
    Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, Saitama 351–01, Japan)

  • TAMOTSU KONDOW

    (Department of Chemistry, School of Science, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan;
    Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, Saitama 351–01, Japan)

Abstract

Collisional processes of${\rm{I}}_2^- ({\rm{CO}}_2)_n$with a silicon surface were investigated. Size-selected${\rm{I}}_2^- ({\rm{CO}}_2)_n$(n=0–30)were allowed to collide with a silicon surface at collision energies per${\rm{I}}_2^-$of 1–150 eV at almost normal incidence angles. All the anions scattered from the surface wereI−,I−(CO2),I−(CO2)2,${\rm{I}}_2^-$,${\rm{I}}_2^- ({\rm{CO}}_2)$, and${\rm{I}}_0^- ({\rm{CO}}_2)_2$. The molecular dynamics simulation revealed that the dissociation of${\rm{I}}_2^-$occurs through vibrational and rotational excitation. The${\rm{I}}_2^-$dissociation was found to be either retarded or accelerated by the presence of the solventCO2molecules. The solvation effects on the dissociation of${\rm{I}}_2^-$were explained in terms of energy transfer between${\rm{I}}_2^-$andCO2solvent molecules and a complex formed on the surface at the moment of the collision.

Suggested Citation

  • Hisato Yasumatsu & Tatsuya Tsukuda & Toshiki Sugai & Akira Terasaki & Takashi Nagata & Tamotsu Kondow, 1996. "SOLVATION EFFECTS ON COLLISIONAL PROCESSES OF SIZE-SELECTED${\rm{I}}_2^- ({\rm{CO}}_2)_n$CLUSTER IONS WITH SILICON SURFACE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(01), pages 901-904.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:01:n:s0218625x96001625
    DOI: 10.1142/S0218625X96001625
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