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Low-Damage Surface Treatment By Gas Cluster-Ion Beams

Author

Listed:
  • M. AKIZUKI

    (Microelectronics Research Center, Sanyo Electric Co. Ltd., Ohmori, Anpachi-gun, Gifu 503–01, Japan)

  • M. HARADA

    (Microelectronics Research Center, Sanyo Electric Co. Ltd., Ohmori, Anpachi-gun, Gifu 503–01, Japan)

  • Y. MIYAI

    (Microelectronics Research Center, Sanyo Electric Co. Ltd., Ohmori, Anpachi-gun, Gifu 503–01, Japan)

  • A. DOI

    (Microelectronics Research Center, Sanyo Electric Co. Ltd., Ohmori, Anpachi-gun, Gifu 503–01, Japan)

  • T. YAMAGUCHI

    (Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan)

  • J. MATSUO

    (Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan)

  • G.H. TAKAOKA

    (Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan)

  • C.E. ASCHERON

    (Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan)

  • I. YAMADA

    (Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan)

Abstract

Low-damage irradiation effects of gas cluster-ion beams have been studied at acceleration voltages below 20 kV. The surfaces of targets have been smoothened significantly byCO2-cluster-ion irradiation at normal incidence. Si substrate surfaces have been cleaned and exhibited low damage afterCO2- and Ar-cluster-ion irradiation at low doses. In the case ofCO2-cluster-ion irradiation,SiO2film of about 5.5-nm thickness have grown on Si substrate at room temperature. A damaged layer of less than 2.5-nm thickness has been formed underneath theSiO2film.

Suggested Citation

  • M. Akizuki & M. Harada & Y. Miyai & A. Doi & T. Yamaguchi & J. Matsuo & G.H. Takaoka & C.E. Ascheron & I. Yamada, 1996. "Low-Damage Surface Treatment By Gas Cluster-Ion Beams," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(01), pages 891-895.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:01:n:s0218625x96001601
    DOI: 10.1142/S0218625X96001601
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