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Modified Moore–Gibson–Thompson photo-thermoelastic model for a rotating semiconductor half-space subjected to a magnetic field

Author

Listed:
  • A. E. Abouelregal

    (Department of Mathematics, College of Science and Arts, Jouf University, Al-Qurayat, Saudi Arabia†Department of Mathematics, Faculty of Science, Mansoura University, Mansoura 35516, Egypt)

  • Hijaz Ahmad

    (��Department of Basic Sciences, University of Engineering and Technology, Peshawar, Pakistan§Section of Mathematics, International Telematic University Uninettuno, Corso Vittorio Emanuele II, 39, 00186 Roma, Italy)

  • S. K. Elagan

    (�Department of Mathematics and Statistics, College of Science, Taif University, P. O. Box 11099 Taif 21944, Saudi Arabia)

  • Nawal A. Alshehri

    (�Department of Mathematics and Statistics, College of Science, Taif University, P. O. Box 11099 Taif 21944, Saudi Arabia)

Abstract

This paper focuses on studying thermal, elastic and coupled plasma waves, in the sense of a photo-thermal process transport within an infinite semiconductor medium. In order to study photo-thermal interactions in two-dimensional semiconducting materials, a new mathematical model based on the Moore–Gibson–Thompson equation (MGTE) is implemented. The MGTE model involving the Green–Naghdi model of type III as well as the heat transport equation proposed by Lord and Shulman. We consider the semi-conductor half-space is rotated at a uniform angular speed and magnetized. The analysis of the distribution of thermophysical fields has been extracted by a normal mode method, represented graphically and discussed. The results predicted by the new and improved model have been compared with the generalized and classic ones. In addition, all field quantities have been examined for effects of rotation, a lifetime of the photo-generated, and the applied magnetic field.

Suggested Citation

  • A. E. Abouelregal & Hijaz Ahmad & S. K. Elagan & Nawal A. Alshehri, 2021. "Modified Moore–Gibson–Thompson photo-thermoelastic model for a rotating semiconductor half-space subjected to a magnetic field," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 32(12), pages 1-26, December.
    • Handle: RePEc:wsi:ijmpcx:v:32:y:2021:i:12:n:s0129183121501631
    DOI: 10.1142/S0129183121501631
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