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Electronic Properties Of A Hydrogenic Impurity In A Quantum Wire With V-Shaped Cross-Section: Spin-Orbit Coupling, Relativistic Correction And Conductance

Author

Listed:
  • R. KHORDAD

    (Department of Physics, College of Sciences, Yasouj University, Yasouj, 75914-353, Iran)

  • H. BAHRAMIYAN

    (Department of Physics, College of Sciences, Yasouj University, Yasouj, 75914-353, Iran)

Abstract

The effects of spin-orbit coupling (SOC) and relativistic correction (RC) on the energy levels of a hydrogenic impurity in aGaAs/Ga1-xAlxAsquantum wire are studied. The quantum wire has a V-shaped cross-section and the impurity located in its center. Our numerical calculations have done using a variational procedure within the effective mass approximation. Our results show that (i) the splitting due to the SOC decreases with increasing the wire width, (ii) the SOC and RC increase when the concentration increases, (iii) the SOC is zero forl = 0(lis angular momentum) and nonzero forl ≠ 0, (iv) for a given wire width, the RC is different forl = 0andl = 1due to expectation values of$\frac{1}{r}$and$\frac{1}{r^{2}}$(ris distance between the electron and impurity). We also computed the conductance of the quantum wire with and without impurity.

Suggested Citation

  • R. Khordad & H. Bahramiyan, 2013. "Electronic Properties Of A Hydrogenic Impurity In A Quantum Wire With V-Shaped Cross-Section: Spin-Orbit Coupling, Relativistic Correction And Conductance," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 24(07), pages 1-13.
  • Handle: RePEc:wsi:ijmpcx:v:24:y:2013:i:07:n:s0129183113500411
    DOI: 10.1142/S0129183113500411
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