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NUMERICAL CALCULATION OF ELECTRON ENERGY STATES FOR NANOSCOPICInAs/GaAsQUANTUM RINGS

Author

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  • YIMING LI

    (Department of Nano Device Technology, National Nano Device Laboratories, Hsinchu 300, Taiwan, ROC;
    Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan, ROC)

Abstract

In this paper we study the electron energy states for nanoscopic semiconductor quantum rings. The effective one-band Hamiltonian approximation and the Ben Daniel–Duke boundary conditions are simultaneously considered in our three-dimensional (3D) model. The rectangular and ellipsoidal torus-shaped rings have been investigated with the 3D model. The proposed model is numerically solved with nonlinear iterative method. This computational method calculates the solution without any fitting parameters and is robust for all simulation cases. ForInAs/GaAsquantum rings, it is found that (1) there is a significant energy difference between the 2D and 3D models; (2) the electron energy state depends strongly on the ring shape and size; and (3) the dependency of the energy state on an external magnetic field is different from conventional 1D/2D periodical result. We find the electron energy state nonperiodically oscillates versus the applied magnetic field which is in agreement with the experimental observation.

Suggested Citation

  • Yiming Li, 2003. "NUMERICAL CALCULATION OF ELECTRON ENERGY STATES FOR NANOSCOPICInAs/GaAsQUANTUM RINGS," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 14(08), pages 995-1005.
    • Handle: RePEc:wsi:ijmpcx:v:14:y:2003:i:08:n:s0129183103005789
    DOI: 10.1142/S0129183103005789
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