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POSITRON ANNIHILATION IN SiC

Author

Listed:
  • N. AMRANE

    (Physics Department, Faculty of Science, United Arab Emirates University, P. O. Box 17551 Al Ain, United Arab Emirates)

Abstract

Valence electron and positron charge densities in SiC are obtained from wave functions derived in a model pseudopotential bandstructure calculation. It is observed that the positron density is maximum in the open interstices and is excluded not only from the ion cores but also, to a considerable degree, from the valence bonds. Electron–positron momentum densities are calculated for the (001–110) plane. The results are used to analyze the positron effect in large gap semiconductors.

Suggested Citation

  • N. Amrane, 2002. "POSITRON ANNIHILATION IN SiC," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 13(07), pages 957-966.
    • Handle: RePEc:wsi:ijmpcx:v:13:y:2002:i:07:n:s0129183102003711
    DOI: 10.1142/S0129183102003711
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