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Influence Of Refractory Periods In The Hopfield Model

Author

Listed:
  • CRISÓGONO R. DA SILVA

    (Centro Brasileiro de Pesquisas Físicas, Rua Xavier Sigaud 150, 22290-180 Rio de Janeiro, Brazil)

  • FRANCISCO A. TAMARIT

    (Fa.M.A.F., Universidad Nacional de Córdoba, Ciudad Universitaria, 5000 Córdoba, Argentina)

  • EVALDO M. F. CURADO

    (Centro Brasileiro de Pesquisas Físicas, Rua Xavier Sigaud 150, 22290-180 Rio de Janeiro, Brazil;
    International Centre of Condensed Matter Physics, C.P. 04667, 70919-970 Brasilia, Brazil)

Abstract

We study both analytically and numerically the effects of including refractory periods in the Hopfield model for associative memory. These periods are introduced in the dynamics of the network as thresholds that depend on the state of the neuron at the previous time. Both the retrieval properties and the dynamical behavior are analyzed, and we found that, depending on the value of the thresholds and on the the ratio α between the number of stored memories(p)and the total number of neurons(N), the system presents not only fixed points but also chaotic or cyclic orbits. The recognizing capability of the network in the cyclic region is also studied.

Suggested Citation

  • Crisógono R. Da Silva & Francisco A. Tamarit & Evaldo M. F. Curado, 1996. "Influence Of Refractory Periods In The Hopfield Model," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 7(01), pages 43-56.
    • Handle: RePEc:wsi:ijmpcx:v:07:y:1996:i:01:n:s0129183196000053
    DOI: 10.1142/S0129183196000053
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