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Computer Simulation of Energy Relaxation and Recombination of Nonequilibrium Electrons in a Disordered System with Localized Electronic States

Author

Listed:
  • S.D. BARANOVSKII

    (A.F. Ioffe Physico-Technical Institute, 194021 Leningrad, USSR)

  • E.I. LEVIN

    (A.F. Ioffe Physico-Technical Institute, 194021 Leningrad, USSR)

  • I.M. RUZIN

    (A.F. Ioffe Physico-Technical Institute, 194021 Leningrad, USSR)

  • H. FRITZSCHE

    (Univ. of Chicago, James Franck Institute, Chicago Ill. 60637, USA)

  • B.I. SHKLOVSKII

    (Univ. of Minnesota, Theor. Phys. Inst., Minneapolis Minn. 55455, USA)

Abstract

A new exact algorithm is developed for the simulation of simultaneous diffusion and recombination of nonequilibrium electrons. It is shown that the diffusion process is non-Markovian, and the exact value of the critical index s is found. The solution of the universal geometrical problem is used to describe many phenomena in disordered systems, such as photoconductivity, photoluminescence etc. The results coincide well with the experimental observations.

Suggested Citation

  • S.D. Baranovskii & E.I. Levin & I.M. Ruzin & H. Fritzsche & B.I. Shklovskii, 1991. "Computer Simulation of Energy Relaxation and Recombination of Nonequilibrium Electrons in a Disordered System with Localized Electronic States," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 2(01), pages 220-222.
    • Handle: RePEc:wsi:ijmpcx:v:02:y:1991:i:01:n:s0129183191000202
    DOI: 10.1142/S0129183191000202
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