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Ultra-wideband metamaterial absorber doped GaAs in the infrared region

Author

Listed:
  • Jiufu Ruan
  • Shengwei Ji
  • Zhi Tao
  • Feng Lan

Abstract

An improved ultra-wideband metamaterial absorber (MA) with high absorptivity in the infrared region is proposed. It features a mixture of copper and GaAs at the top layer, which can greatly raise the bandwidth and absorption rate due to the coupling effect between copper and GaAs. The spectrum with absorption rate of 90% in the infrared region from 98 to 152 THz can be obtained. The input-impedance matching theory, as well as surface current distributions and power loss density have been investigated to analyze the absorption mechanism of the perfect absorption performance. In addition, the MA is insensitive to polarization and incident angle. This work may provide a further step in the development of ultra-broadband devices, such as filters, sensors and energy harvesting and stealth devices.

Suggested Citation

  • Jiufu Ruan & Shengwei Ji & Zhi Tao & Feng Lan, 2021. "Ultra-wideband metamaterial absorber doped GaAs in the infrared region," Journal of Electromagnetic Waves and Applications, Taylor & Francis Journals, vol. 35(8), pages 1088-1098, May.
    • Handle: RePEc:taf:tewaxx:v:35:y:2021:i:8:p:1088-1098
    DOI: 10.1080/09205071.2020.1870163
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