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On-chip GaN-on-SiC VCO using a tunable substrate integrated waveguide loaded with complementary split ring resonator

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  • Hsuan-Ling Kao
  • Cheng-Lin Cho

Abstract

This paper presents an S-band voltage-controlled oscillator (VCO) using a tunable half-mode substrate integrated waveguide (HMSIW) loaded with complementary split ring resonator (CSRR) in GaN-on-SiC high-electron-mobility transistor technology. A varactor connected to the center of the outer conductor of the HMSIW-CSRR changed the effective capacitance, resulting in a resonance frequency shift but a fixed transmission zero. Therefore, the S-band VCO can be tuned by the HMSIW-CSRR using harmonic suppression. The tunable HMSIW-CSRR VCO exhibited a frequency tuning range of 3.55–3.98 GHz with a varactor voltage of 0–6 V. The maximum output power was 21.1 dBm and rf-to-dc efficiency was 12.8% at 3.98 GHz. The lowest phase noise was −117 dBc/Hz with 1-MHz offset at a 3.56 GHz carrier frequency with 30.55 dBc of harmonic suppression.

Suggested Citation

  • Hsuan-Ling Kao & Cheng-Lin Cho, 2019. "On-chip GaN-on-SiC VCO using a tunable substrate integrated waveguide loaded with complementary split ring resonator," Journal of Electromagnetic Waves and Applications, Taylor & Francis Journals, vol. 33(8), pages 1052-1059, May.
    • Handle: RePEc:taf:tewaxx:v:33:y:2019:i:8:p:1052-1059
    DOI: 10.1080/09205071.2019.1588790
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