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A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design

Author

Listed:
  • Yuehang Xu
  • Wenli Fu
  • Changsi Wang
  • Chunjiang Ren
  • Haiyan Lu
  • Weibin Zheng
  • Xuming Yu
  • Bo Yan
  • Ruimin Xu

Abstract

This paper presents a large-signal empirical model for GaN HEMT devices using an improved Angelov drain current formulation with self-heating effect and a modified non-linear capacitance model. The established model for small gate-width GaN HEMTs is validated by on-wafer load-pull measurements up to 14 GHz. Moreover, a scalable large-signal model is presented by adding scalable parameters to drain-source current and non-linear capacitance equations. The scalable model of a 1.25 mm GaN HEMT has been employed to design a class-AB power amplifier for validation purposes. The results show that good agreement has been achieved between the simulated and measured results with 37.2 dBm saturation output power (Psat) and 58% maximum power-added-efficiency at 3 GHz.

Suggested Citation

  • Yuehang Xu & Wenli Fu & Changsi Wang & Chunjiang Ren & Haiyan Lu & Weibin Zheng & Xuming Yu & Bo Yan & Ruimin Xu, 2014. "A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design," Journal of Electromagnetic Waves and Applications, Taylor & Francis Journals, vol. 28(15), pages 1888-1895, October.
    • Handle: RePEc:taf:tewaxx:v:28:y:2014:i:15:p:1888-1895
    DOI: 10.1080/09205071.2014.947440
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