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Full RLGC model extraction of Through Silicon Via (TSV) with charge distribution effects

Author

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  • Guang-Xiao Luo
  • Xing-Chang Wei
  • Ran Hao
  • Xiang Cui
  • Er-Ping Li

Abstract

The analytical model based on Poisson–Boltzmann equation in a cylindrical coordinate system is developed for simulating the electrical parameters of the three-dimensional Through Silicon Via (TSV) interconnection. Considering the effects of bias voltage, the accurate charge distribution and the high-frequency capacitance in the depletion layer of the semiconductor is obtained. Moreover, the resistance and inductance parameters of TSV are extracted by using the partial element equivalent circuit method. Finally, the full resistance–inductance–capacitance–conductance electrical model of TSV interconnection is presented first time with the semiconductor behaviour, and the transmission characteristics of signal-ground TSV structure are studied.

Suggested Citation

  • Guang-Xiao Luo & Xing-Chang Wei & Ran Hao & Xiang Cui & Er-Ping Li, 2014. "Full RLGC model extraction of Through Silicon Via (TSV) with charge distribution effects," Journal of Electromagnetic Waves and Applications, Taylor & Francis Journals, vol. 28(13), pages 1596-1609, September.
    • Handle: RePEc:taf:tewaxx:v:28:y:2014:i:13:p:1596-1609
    DOI: 10.1080/09205071.2014.933086
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