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A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions

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  • D. Büchl
  • W. Kemmetmüller
  • T. Glück
  • B. Deutschmann
  • A. Kugi

Abstract

Hard switching of semiconductors is the main source of conducted electromagnetic emissions (EME) in pulse-width modulation (PWM) driven power inverters. The requirements on the electromagnetic compatibility grow with the increasing number of installed electric motor drives and inductive power converters. An accurate prediction of the conducted EME requires a model which considers the switching transition of the power semiconductors and the parasitic elements. This typically leads to complex SPICE models, which are hardly suitable for fast dynamic simulations and model-based controller design. This paper presents a compact mathematical model of a low voltage half-bridge inverter, which is based on large-signal models for the individual components and allows for the fast simulation of the conducted EME and switching losses. The high accuracy of the proposed mathematical model is demonstrated by measurement results. In particular, it is shown that the model is able to accurately predict the conducted electromagnetic emissions up to 100 MHz.

Suggested Citation

  • D. Büchl & W. Kemmetmüller & T. Glück & B. Deutschmann & A. Kugi, 2019. "A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions," Mathematical and Computer Modelling of Dynamical Systems, Taylor & Francis Journals, vol. 25(3), pages 242-260, May.
    • Handle: RePEc:taf:nmcmxx:v:25:y:2019:i:3:p:242-260
    DOI: 10.1080/13873954.2019.1610899
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