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Design and analysis of GaAs PHEMT LNA for LEO satellite communication systems

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  • Mansour Bacha

    (Algerian Space Agency)

Abstract

In this paper a microwave low noise amplifier (LNA) for low earth orbit (LEO) satellite receivers is designed and simulated. In order to amplify weak radiofrequency signals containing telecommand data transmitted by ground station’s, and improve the signal-to-noise ratio at the receiver output, it is important to use a low noise amplifier presenting good performances in terms of high gain, low noise figure and low input and output reflection coefficients. In this work, a novel design of microwave monolithic integrated circuit (MMIC) low noise amplifier based on GaAs ATF 36,077 pseudomorphic high electron mobility transistor (PHEMT) is proposed to operate at the frequency range of 2–6 GHz. The two stages distributed LNA, designed and implemented on Rogers RO4350B substrate, achieved a gain of 32,78 dB, input and output return losses (S11 and S22) less than − 10 dB (in the frequency band 2.2–6 GHz), 2.547 dB minimum noise figure (NF) and output/input isolation (S12) less than − 50 dB. For its excellent performances, the designed distributed LNA is proper for using at the front-end receiver of LEO satellite communication systems.

Suggested Citation

  • Mansour Bacha, 2025. "Design and analysis of GaAs PHEMT LNA for LEO satellite communication systems," Telecommunication Systems: Modelling, Analysis, Design and Management, Springer, vol. 88(2), pages 1-8, June.
    • Handle: RePEc:spr:telsys:v:88:y:2025:i:2:d:10.1007_s11235-025-01287-x
    DOI: 10.1007/s11235-025-01287-x
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