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Analysis of Josephson junction with topologically nontrivial barrier

Author

Listed:
  • Sifeu Takougang Kingni

    (Petroleum and Gas Engineering, Faculty of Mines and Petroleum Industries, University of Maroua)

  • André Cheukem

    (Research Unit of Automation and Applied Computer, Electrical Engineering Department of IUT-FV, University of Dschang)

  • André Cheage Chamgoué

    (School of Geology and Mining Engineering, University of Ngaoundere)

  • Fulbert Togue Kamga

    (Institute of Fisheries and Aquatic Sciences at Yabassi, University of Douala)

Abstract

Josephson junction (JJ) with topologically nontrivial barrier is analytically and numerically analyzed in this paper. This system has four, two, or no equilibrium points depending on the external direct current (DC) source and the fractional parameter. The existence of pitchfork bifurcation is established during the stability analysis of the equilibrium points. The inclusion of fractional parameter in JJ leads to an increase in the hysteresis loop of current-voltage characteristics. For a suitable choice of modulation parameters of external current source, JJ with topologically nontrivial barrier can display excitable mode, bistable, periodic and chaotic behaviors. Graphical abstract

Suggested Citation

  • Sifeu Takougang Kingni & André Cheukem & André Cheage Chamgoué & Fulbert Togue Kamga, 2020. "Analysis of Josephson junction with topologically nontrivial barrier," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 93(8), pages 1-5, August.
    • Handle: RePEc:spr:eurphb:v:93:y:2020:i:8:d:10.1140_epjb_e2020-10125-3
    DOI: 10.1140/epjb/e2020-10125-3
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    Cited by:

    1. Ramadoss, Janarthanan & Ngongiah, Isidore Komofor & Chamgoué, André Chéagé & Kingni, Sifeu Takougang & Rajagopal, Karthikeyan, 2023. "Fractal resistive–capacitive–inductive shunted Josephson junction: Theoretical investigation and microcontroller implementation," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 611(C).

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    Keywords

    Solid State and Materials;

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