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Model of n-type quadruple δ-doped GaAs quantum wells

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  • Humberto Noverola-Gamas

    (Instituto de Investigaciones en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa
    División Académica de Ingeniería y Arquitectura, Universidad Juárez Autónoma de Tabasco, Carretera Cunduacán-Jalpa de Méndez Km. 1 Col. La Esmeralda)

  • Luis M. Gaggero-Sager

    (Centro de Investigación en Ingeniería y Ciencias Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa)

  • Outmane Oubram

    (Facultad de Ciencias Químicas e Ingeniería, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa
    Departament of Physics, St. John’s University, 800 Utopia Pkwy, Jamaica)

Abstract

Thomas Fermi (TF) approach was used to represent a model for the n-type quadruple δ-doped (QDD) system in GaAs. This is the first physical model in the literature for the QDD system. The energies, the wave functions and the Fermi energy (EF) were calculated. These calculations were performed for different density of impurities in the doped layer (N2D) and for different separation distances (d) between the doped layers. Preliminary results show that the value of the Fermi level for the first proposed model is well below its expected value. This observation is exploited for a second model consistent with the expected values of the EF. Our results indicate that there is a limit at the bottom of the potential profile for a multilayered doped delta system. This has a great importance for calculations in optoelectronic and transport properties. Graphical abstract

Suggested Citation

  • Humberto Noverola-Gamas & Luis M. Gaggero-Sager & Outmane Oubram, 2020. "Model of n-type quadruple δ-doped GaAs quantum wells," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 93(1), pages 1-5, January.
    • Handle: RePEc:spr:eurphb:v:93:y:2020:i:1:d:10.1140_epjb_e2019-100412-7
    DOI: 10.1140/epjb/e2019-100412-7
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    Keywords

    Solid State and Materials;

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