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Electrical and material properties of hydrothermally grown single crystal (111) UO2

Author

Listed:
  • Christina L. Dugan

    (Air Force Institute of Technology)

  • George Glenn Peterson

    (University of Nebraska, Walter Scott Engineering Center)

  • Alyssa Mock

    (University of Nebraska, Walter Scott Engineering Center)

  • Christopher Young

    (Air Force Institute of Technology)

  • J. Matthew Mann

    (Air Force Research Laboratory)

  • Michael Nastasi

    (Air Force Institute of Technology
    Nebraska Center for Energy Sciences Research, University of Nebraska)

  • Mathias Schubert

    (University of Nebraska, Walter Scott Engineering Center)

  • Lu Wang

    (CAS Key Lab of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China
    University of Nebraska at Omaha)

  • Wai-Ning Mei

    (University of Nebraska at Omaha)

  • Iori Tanabe

    (CAS Key Lab of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China)

  • Peter A. Dowben

    (University of Nebraska-Lincoln)

  • James Petrosky

    (Air Force Institute of Technology)

Abstract

The semiconductor and optical properties of UO2 are investigated. The very long drift carrier lifetimes, obtained from current–voltage I(V) and capacitance–voltage C(V) measurements, along with the well-defined optical properties provide little evidence of an abundance of material defects away from the surface region. Schottky barrier formation may be possible, but very much dependent on the choice of contact and surface stoichiometry and we find that Ohmic contacts are in fact favored. Depth resolved photoemission provided evidence of a chemical shift at the surface. Density functional theory, with the Heyd-Scuseria-Ernzerhof (HSE) functional, indicates a band gap of a 2.19 eV and an anti-ferromagnetic ground state. Ellipsometry measurements indicates at UO2 is relatively isotropic with a band gap of approximately 2.0 eV band gap, consistent with theoretical expectations.

Suggested Citation

  • Christina L. Dugan & George Glenn Peterson & Alyssa Mock & Christopher Young & J. Matthew Mann & Michael Nastasi & Mathias Schubert & Lu Wang & Wai-Ning Mei & Iori Tanabe & Peter A. Dowben & James Pet, 2018. "Electrical and material properties of hydrothermally grown single crystal (111) UO2," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 91(4), pages 1-7, April.
    • Handle: RePEc:spr:eurphb:v:91:y:2018:i:4:d:10.1140_epjb_e2018-80489-x
    DOI: 10.1140/epjb/e2018-80489-x
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    Cited by:

    1. Chang, Ling-Yu & Chang, Ching-Cheng & Rinawati, Mia & Chang, Yu-Hsin & Cheng, Yao-Sheng & Ho, Kuo-Chuan & Chen, Chia-Chin & Lin, Chia-Her & Wang, Chia-Hsin & Yeh, Min-Hsin, 2024. "Near-infrared photoelectrochromic device with graphene quantum dot modified WO3 thin film toward fast-response thermal management for self-powered Agrivoltaics," Applied Energy, Elsevier, vol. 361(C).

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    Keywords

    Solid State and Materials;

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