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Hole pairing and ground state properties of high-T c superconductivity within the t–t′–J–V model

Author

Listed:
  • Krishanu Roy

    (University of Kalyani)

  • Papiya Pal

    (University of Kalyani)

  • Subhadip Nath

    (Krishnagar Govt. College)

  • Nanda Kumar Ghosh

    (University of Kalyani)

Abstract

The t–t′–J–V model, one of the realistic models for studying high-T c cuprates, has been investigated to explore the hole pairing and other ground state properties using exact diagonalization (ED) technique with 2 holes in a small 8-site cluster. The role of next-nearest-neighbor (NNN) hopping and nearest-neighbor (NN) Coulomb repulsion has been considered. It appears that qualitative behavior of the ground state energies of an 8-site and 16- or 18-site cluster is similar. Results show that a small short-ranged antiferromagnetic (AF) correlation exists in the 2 hole case which is favored by large V∕t. A superconducting phase emerges at 0 ≤ V∕t ≤ 4J. Hole–hole correlation calculation also suggests that the two holes of the pair are either at |i − j| = 1 or √2. Negative t′∕t suppresses the possibility of pairing of holes. Though s-wave pairing susceptibility is dominant, pairing correlation length calculation indicates that the long range pairing, which is suitable for superconductivity, is in the d-wave channel. Both s- and d-wave pairing susceptibility gets suppressed by V∕t while d-(s-) wave susceptibility gets favored (suppressed) by t′∕t. The charge gap shows a gapped behavior while a spin-gapless region exists at small V∕t for finite t ′ ∕t.

Suggested Citation

  • Krishanu Roy & Papiya Pal & Subhadip Nath & Nanda Kumar Ghosh, 2018. "Hole pairing and ground state properties of high-T c superconductivity within the t–t′–J–V model," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 91(4), pages 1-9, April.
  • Handle: RePEc:spr:eurphb:v:91:y:2018:i:4:d:10.1140_epjb_e2018-80488-y
    DOI: 10.1140/epjb/e2018-80488-y
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    Keywords

    Solid State and Materials;

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